DataSheet.in

IRGPH30MD2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPH30MD2
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
1 Page
		
<?=IRGPH30MD2?> डेटा पत्रक पीडीएफ

IRGPH30MD2 pdf
Previous Datasheet
Index
Next Data Sheet
IRGPH30MD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — — — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage — 3.1 3.5
IC = 9.0A
VGE = 15V
— 4.9 — V IC = 15A
— 3.6 —
IC = 9.0A, T J = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
2.5 — — S VCE = 100V, I C = 9.0A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 1200V
— — 2500
VGE = 0V, VCE = 1200V, T J = 150°C
VFM Diode Forward Voltage Drop
— 2.7 3.0 V IC = 6.0A
— 2.4 2.7
IC = 6.0A, T J = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr Diode Peak Reverse Recovery Current
Qrr Diode Reverse Recovery Charge
di(rec)M/dt Diode Peak Rate of Fall of Recovery
During tb
Notes: Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
— 25 30
IC = 9.0A
— — 6.0 nC VCC = 960V
— — 15
— 2.3 —
— 10 —
— 200 450
— 210 390
TJ = 25°C
ns IC = 9.0A, V CC = 960V
VGE = 15V, R G = 23
Energy losses include "tail" and
———
diode reverse recovery.
— — — mJ
— 4.0 7.0
10 — —
— 33 —
— 20 —
— 480 —
— 450 —
µs VCC = 720V, T J = 125°C
VGE = 15V, R G = 23, VCPK < 1000V
TJ = 150°C,
ns IC = 9.0A, V CC = 960V
VGE = 15V, R G = 23
Energy losses include "tail" and
— 8.0 — mJ diode reverse recovery.
— 13 — nH Measured 5mm from package
— 670 —
— 50 —
— 10 —
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
— 53 80 ns TJ = 25°C
— 87 130
TJ = 125°C
— 4.4 8.0 A TJ = 25°C
— 5.0 9.0
TJ = 125°C
— 116 320 nC TJ = 25°C
— 233 585
TJ = 125°C
— 180 — A/µs TJ = 25°C
— 100 —
TJ = 125°C
IF = 6.0A
VR = 200V
di/dt = 200A/µs
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 23
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
Refer to Section D - page D-13 for Package Outline 3 - JEDEC Outline TO-247AC
C-478
To Order

विन्यास 2 पेज
डाउनलोड[ IRGPH30MD2 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRGPH30MD2INSULATED GATE BIPOLAR TRANSISTORIRF
IRF


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English