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IRGPC20MD2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY - IRF

भाग संख्या IRGPC20MD2
समारोह INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
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IRGPC20MD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temp. Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
— 0.42 — V/°C VGE = 0V, IC = 1.0mA
— 2.0 2.5
IC = 8.0A
VGE = 15V
— 2.7 —
— 2.5 —
V IC = 13A
See Fig. 2, 5
IC = 8.0A, T J = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
2.7 3.8 — S VCE = 100V, I C = 8.0A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
VFM Diode Forward Voltage Drop
— — 1700
— 1.4 1.7 V
VGE = 0V, VCE = 600V, T J = 150°C
IC = 8.0A
See Fig. 13
— 1.4 1.7
IC = 8.0A, T J = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr Diode Peak Reverse Recovery Current
Qrr Diode Reverse Recovery Charge
di(rec)M/dt
Notes:
Diode Peak Rate of Fall of Recovery
During tb
Repetitive rating; V GE=20V, pulse width limited
by max. junction temperature. ( See fig. 20 )
Min. Typ. Max. Units
Conditions
— 16 24
— 3.6 5.2
IC = 8.0A
nC VCC = 400V
— 6.0 9.0
See Fig. 8
— 66 —
TJ = 25°C
— 40 — ns IC = 8.0A, V CC = 480V
— 330 540
VGE = 15V, R G = 50
— 260 480
Energy losses include "tail" and
— 0.5 —
diode reverse recovery.
— 1.0 — mJ See Fig. 9, 10, 11, 18
— 1.5 2.5
10 — —
— 65 —
µs VCC = 360V, T J = 125°C
VGE = 15V, R G = 50, VCPK < 500V
TJ = 150°C, See Fig. 9, 10, 11, 18
— 46 —
— 520 —
ns IC = 8.0A, V CC = 480V
VGE = 15V, R G = 50
— 560 —
Energy losses include "tail" and
— 2.3 — mJ diode reverse recovery.
— 13 — nH Measured 5mm from package
— 365 —
VGE = 0V
— 47 —
— 4.8 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
— 37 55
— 55 90
ns TJ = 25°C See Fig.
TJ = 125°C
14
IF = 8.0A
— 3.5 5.0
— 4.5 8.0
A TJ = 25°C See Fig.
TJ = 125°C
15
V R = 200V
— 65 138 nC TJ = 25°C See Fig.
— 124 360
TJ = 125°C
16 di/dt = 200A/µs
— 240 — A/µs TJ = 25°C See Fig.
— 210 —
TJ = 125°C 17
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 50, ( See fig. 19 )
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-382
To Order

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डाउनलोड[ IRGPC20MD2 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

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IRGPC20MD2INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERYIRF
IRF


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