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IRGPC30U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPC30U
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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IRGPC30U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
Min.
600
20
3.0
3.1
Typ. Max. Units
—— V
—— V
0.63 — V/°C
2.2 3.0
2.7 — V
2.4 —
— 5.5
-11 — mV/°C
8.6 — S
— 250 µA
— 1000
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 12A
VGE = 15V
IC = 23A
See Fig. 2, 5
IC = 12A, T J = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, I C = 12A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, T J = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 29 36
IC = 12A
— 4.8 6.8
— 12 17
nC VCC = 400V
VGE = 15V
See Fig. 8
— 24 —
TJ = 25°C
— 15 — ns IC = 12A, VCC = 480V
— 92 200
VGE = 15V, R G = 23
— 93 190
Energy losses include "tail"
— 0.18 —
— 0.35 — mJ See Fig. 9, 10, 11, 14
— 0.53 1.0
— 24 —
— 15 —
— 160 —
— 200 —
TJ = 150°C,
ns IC = 12A, VCC = 480V
VGE = 15V, R G = 23
Energy losses include "tail"
— 0.90 — mJ See Fig. 10, 14
— 13 — nH Measured 5mm from package
— 660 —
— 100 —
VGE = 0V
pF VCC = 30V
See Fig. 7
— 11 —
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 23, ( See fig. 13a )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-676
To Order

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