DataSheet.in

IRGPC40 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPC40
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
1 Page
		
<?=IRGPC40?> डेटा पत्रक पीडीएफ

IRGPC40 pdf
Previous Datasheet
Index
Next Data Sheet
IRGPC40F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES Collector-to-Emitter Breakdown Voltage
V(BR)ECS Emitter-to-Collector Breakdown Voltage
V(BR)CES/TJ Temp. Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
Conditions
600 — — V VGE = 0V, IC = 250µA
20 — — V VGE = 0V, IC = 1.0A
— 0.70 — V/°C VGE = 0V, IC = 1.0mA
— 1.7 2.0
IC = 27A
VGE = 15V
— 2.2 — V IC = 49A
See Fig. 2, 5
— 1.9 —
IC = 27A, TJ = 150°C
3.0 — 5.5
VCE = VGE, IC = 250µA
— -12 — mV/°C VCE = VGE, IC = 250µA
9.2 12 — S VCE = 100V, IC = 27A
— — 250 µA VGE = 0V, VCE = 600V
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 59 80
IC = 27A
— 8.6 10 nC VCC = 400V
See Fig. 8
— 25 42
VGE = 15V
— 25 —
TJ = 25°C
— 37 — ns IC = 27A, VCC = 480V
— 240 410
VGE = 15V, RG = 10
— 230 420
Energy losses include "tail"
— 0.65 —
— 3.0 — mJ See Fig. 9, 10, 11, 14
— 3.65 6.0
— 28 —
TJ = 150°C,
— 37 —
— 380 —
ns IC = 27A, VCC = 480V
VGE = 15V, RG = 10
— 460 —
Energy losses include "tail"
— 6.0 — mJ See Fig. 10, 14
— 13 — nH Measured 5mm from package
— 1500 —
VGE = 0V
— 190 — pF VCC = 30V
See Fig. 7
— 20 —
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10, ( See fig. 13a )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-82
To Order

विन्यास 6 पेज
डाउनलोड[ IRGPC40 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRGPC40INSULATED GATE BIPOLAR TRANSISTORIRF
IRF
IRGPC40FINSULATED GATE BIPOLAR TRANSISTORIRF
IRF


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English