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IRG4PH40UD2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - IRF

भाग संख्या IRG4PH40UD2
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स IRF 
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IRG4PH40UD2 pdf
IRG4PH40UD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.63
— V VGE = 0V, IC = 250µA
— V/°C VGE = 0V, IC = 1mA (25°C-150°C)
— 1.72 2.1 V IC = 20A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.15 —
IC = 40A, VGE = 15V, TJ = 125°C
— 1.7 —
IC = 20A, VGE = 15V, TJ = 150°C
VGE(th)
VGE(th)/TJ
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
gForward Transconductance
3.0 — 6.0
VCE = VGE, IC = 250µA
— -13 — mV/°C VCE = VGE, IC = 250µA
11 18 — S VCE = 100V, IC = 20A
— — 250
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
— — 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C
— — 2500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 3.4 3.8 V IF = 10A, VGE = 0V
— 3.3 3.7
IF = 10A, VGE = 0V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 110 130
IC = 20A
Qge Gate-to-Emitter Charge (turn-on)
— 18 24 nC VCC = 400V
Qgc
Gate-to-Collector Charge (turn-on)
— 36 53
VGE = 15V
td(on)
Turn-On delay time
— 23 —
IC = 20A, VCC = 600V
tr Rise time
— 27 — ns VGE = 15V, RG = 10
td(off)
Turn-Off delay time
— 100 110
TJ = 25°C
tf Fall time
— 280 340
Energy losses inclued "tail"
Eon Turn-On Switching Loss
— 1440 —
IC = 20A, VCC = 600V
Eoff Turn-Off Switching Loss
— 1410 — µJ VGE = 15V, RG = 10
Etot Total Switching Loss
— 2850 3740
TJ = 25°C
td(on)
tr
Turn-On delay time
Rise time
— 22 —
IC = 20A, VCC = 600V
— 32 — ns VGE = 15V, RG = 10, L = 1.0mH
td(off)
Turn-Off delay time
— 190 —
TJ = 150°C
tf Fall time
— 630 —
Energy losses inclued "tail"
ETS Total Switching Loss
— 5360 — µJ
LE Internal Emitter Inductance
— 13 — nH Measured 5mm froom package
Cies Input Capacitance
— 2100 —
VGE = 0V
Coes Output Capacitance
— 99 — pF VCC = 30V
Cres Reverse Transfer Capacitance
— 12 —
f = 1.0MHz
trr Diode Reverse Recovery Time
— 50 76 ns TJ=25°C, VCC = 200V, IF = 10A, di/dt = 200A/µs
— 72 110
TJ=125°C, VCC = 200V, IF = 10A, di/dt = 200A/µs
Irr
Diode Peak Reverse Recovery Current
— 4.4 7.0 A TJ=25°C, VCC = 200V, IF = 10A, di/dt = 200A/µs
— 5.9 8.8
TJ=125°C, VCC = 200V, IF = 10A, di/dt = 200A/µs
Qrr
Diode Reverse Recovery Charge
— 130 200 nC TJ=25°C, VCC = 200V, IF = 10A, di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
— 250 380
TJ=125°C, VCC = 200V, IF = 10A, di/dt = 200A/µs
— 210 — A/µs TJ=25°C, VCC = 200V, IF = 10A, di/dt = 200A/µs
During tb
— 180 —
TJ=125°C, VCC = 200V, IF = 10A, di/dt = 200A/µs
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