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IRG4PH40UD2-E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - IRF

भाग संख्या IRG4PH40UD2-E
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
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IRG4PH40UD2-E pdf
IRG4PH40UD2-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Min. Typ. Max. Units Conditions
Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250μA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
18 — — V VGE = 0V, IC = 1.0A
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.43 — V/°C VGE = 0V, IC = 1mA
— 2.43 3.1 V IC = 21A
VGE = 15V
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.97 —
IC = 41A
See Fig.2, 5
— 2.47 —
IC = 21A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
VCE = VGE, IC = 250μA
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient
fgfe Forward Transconductance
— -11 — mV/°C VCE = VGE, IC = 250μA
16 24 — S VCE = 100V, IC = 21A
ICES
Zero Gate Voltage Collector Current
— — 250 μA VGE = 0V, VCE = 1200V
— — 5000
VGE = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 3.4 3.8 V IF = 10A See Fig.13
— 3.3 3.7
IF = 10A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on)
— 100 150
IC = 21A
Qge Gate-to-Emitter Charge (turn-on)
— 18 24 nC VCC = 400V
See Fig.8
Qgc
Gate-to-Collector Charge (turn-on)
— 34 50
VGE = 15V
td(on)
Turn-On delay time
— 22 —
tr Rise time
— 26 — ns IC = 21A, VCC = 800V
td(off)
Turn-Off delay time
— 100 140
VGE = 15V, RG = 10Ω
tf Fall time
— 200 300
Energy losses include "tail" and
Eon Turn-On Switching Loss
— 1950 —
diode reverse recovery.
Eoff Turn-Off Switching Loss
— 1710 — μJ See Fig. 9, 10, 11, 18
Etot Total Switching Loss
— 3660 4490
td(on)
Turn-On delay time
— 21 —
TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise time
— 25 — ns IC = 21A, VCC = 800V
td(off)
Turn-Off delay time
— 220 —
VGE = 15V, RG = 10Ω
tf Fall time
— 380 —
Energy losses include "tail" and
ETS Total Switching Loss
— 6220 — μJ diode reverse recovery.
LE Internal Emitter Inductance
— 13 — nH Measured 5mm from package
Cies Input Capacitance
— 2100 —
VGE = 0V
Coes Output Capacitance
— 99 — pF VCC = 30V, See Fig.7
Cres Reverse Transfer Capacitance
— 12 —
f = 1.0MHz
trr Diode Reverse Recovery Time
— 50 76 ns TJ=25°C
See Fig
— 72 110
TJ=125°C 14 IF = 8.0A
Irr
Diode Peak Reverse Recovery Current
— 4.4 7.0 A TJ=25°C
See Fig
Qrr Diode Reverse Recovery Charge
— 5.9 8.8
TJ=125°C
— 130 200 nC TJ=25°C
15
See Fig
VR = 200V
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
— 250 380
TJ=125°C
— 210 — A/μs TJ=25°C
16
See Fig
di/dt = 200A/μs
During tb
— 180 —
TJ=125°C
17
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