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IRG4PF50WD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - IRF

भाग संख्या IRG4PF50WD
समारोह INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
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IRG4PF50WD pdf
IRG4PF50WD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance „
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
900 — — V VGE = 0V, IC = 250µA
— 0.295 — V/°C VGE = 0V, IC = 3.5mA
— 2.25 2.7
IC = 28A
VGE = 15V
— 2.74 — V IC = 60A
See Fig. 2, 5
— 2.12 —
IC = 28A, TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -13 — mV/°C VCE = VGE, IC = 250µA
26 39 — S VCE = 50V, IC = 28A
— — 500 µA VGE = 0V, VCE = 900V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 6.5 mA VGE = 0V, VCE = 900V, TJ = 150°C
— 2.5 3.5 V IC = 16A
See Fig. 13
— 2.1 3.0
IC = 16A, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 160 240
IC = 28A
— 19 29 nC VCC = 400V
See Fig. 8
— 53 80
VGE = 15V
— 71 —
TJ = 25°C
— 50 —
— 150 220
ns IC = 28A, VCC = 720V
VGE = 15V, RG = 5.0
— 110 170
Energy losses include "tail" and
— 2.63 —
diode reverse recovery.
— 1.34 — mJ See Fig. 9, 10, 18
— 3.97 5.3
— 69 —
TJ = 150°C, See Fig. 11, 18
— 52 —
— 270 —
ns IC = 28A, VCC = 720V
VGE = 15V, RG = 5.0
— 190 —
Energy losses include "tail" and
— 6.0 — mJ diode reverse recovery.
— 13 — nH Measured 5mm from package
— 3300 —
VGE = 0V
— 200 — pF VCC = 30V
See Fig. 7
— 45 —
ƒ = 1.0MHz
— 90 135 ns TJ = 25°C See Fig.
— 164 245
TJ = 125°C 14
IF = 16A
— 5.8 10 A TJ = 25°C See Fig.
— 8.3 15
TJ = 125°C 15
VR = 200V
— 260 675 nC TJ = 25°C See Fig.
— 680 1838
TJ = 125°C 16 di/dt = 200A/µs
— 120 — A/µs TJ = 25°C See Fig.
— 76 —
TJ = 125°C 17
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