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IRG4PC50F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRG4PC50F
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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IRG4PC50F pdf
IRG4PC50F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600 — —
Emitter-to-Collector Breakdown Voltage T 18 — —
V VGE = 0V, IC = 250µA
V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.62 V/°C VGE = 0V, IC = 1.0mA
1.45 1.6
IC = 39A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
1.79 V IC = 70A
See Fig.2, 5
1.53
IC = 39A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage -14 mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U
21 30 S VCE = 100V, IC = 39A
ICES
Zero Gate Voltage Collector Current
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 2000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
190 290
IC = 39A
28 42
65 97
nC VCC = 400V
VGE = 15V
See Fig. 8
31
25 ns TJ = 25°C
240 350
IC = 39A, VCC = 480V
130 190
VGE = 15V, RG = 5.0
0.37
Energy losses include "tail"
2.1 mJ See Fig. 10, 11, 13, 14
2.47 3.0
28
TJ = 150°C,
24
390
ns IC = 39A, VCC = 480V
VGE = 15V, RG = 5.0
230
Energy losses include "tail"
5.0 mJ See Fig. 13, 14
13 nH Measured 5mm from package
4100
VGE = 0V
250
49
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com

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