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IRG4PC50KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRG4PC50KD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
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IRG4PC50KD pdf
IRG4PC50KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage Ž 600 — — V VGE = 0V, IC = 250µA
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage — 0.47 — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage — 1.84 2.2
IC = 30A
VGE = 15V
— 2.19 — V IC = 52A
see figures 2, 5
— 1.79 —
IC = 25A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
VCE = VGE, IC = 250µA
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 
17 24 — S VCE = 100V, IC = 30A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 6500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 1.3 1.7 V IC = 25A
see figure 13
— 1.2 1.5
IC = 25A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 200 300
IC = 30A
— 25 38 nC VCC = 400V
see figure 8
— 85 127
VGE = 15V
— 63 —
— 49 — ns TJ = 25°C
— 150 220
IC = 30A, VCC = 480V
— 95 140
VGE = 15V, RG = 5.0W
— 1.61 —
Energy losses include "tail"
— 0.84 — mJ and diode reverse recovery
— 2.45 3.0see figures 9,10,18
10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10W , VCPK < 500V
— 61 —
TJ = 150°C,
see figures 11,18
— 46 —
— 310 —
ns IC = 30A, VCC = 480V
VGE = 15V, RG = 5.0W
— 170 —
Energy losses include "tail"
— 3.53 — mJ and diode reverse recovery
— 13 — nH Measured 5mm from package
— 3200 —
VGE = 0V
— 370 — pF VCC = 30V
see figure 7
— 95 —
ƒ = 1.0MHz
— 50 75 ns TJ = 25°C see figure
— 105 160
TJ = 125°C 14
IF = 25A
— 4.5 10 A TJ = 25°C see figure
— 8.0 15
TJ = 125°C 15
VR = 200V
— 112 375 nC TJ = 25°C see figure
— 420 1200
TJ = 125°C 16 di/dt 200A/µs
— 250 — A/µs TJ = 25°C see figure
— 160 —
TJ = 125°C 17
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