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IRG4PC50U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRG4PC50U
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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IRG4PC50U pdf
IRG4PC50U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ----
----
VCE(ON)
Collector-to-Emitter Saturation Voltage
----
----
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
3.0
----
16
----
----
----
IGES Gate-to-Emitter Leakage Current
----
---- ---- V VGE = 0V, IC = 250µA
---- ---- V VGE = 0V, IC = 1.0A
0.60 ---- V/°C VGE = 0V, IC = 1.0mA
1.65 2.0
IC = 27A
VGE = 15V
2.0 ----
1.6 ----
V
IC = 55A
See Fig.2, 5
IC = 27A , TJ = 150°C
---- 6.0
VCE = VGE, IC = 250µA
-13 ---- mV/°C VCE = VGE, IC = 250µA
24 ---- S VCE 15V, IC = 27A
---- 250 µ A VGE = 0V, VCE = 600V
---- 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
---- 5000
VGE = 0V, VCE = 600V, TJ = 150°C
---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
---- 180 270
IC = 27A
---- 25 38
---- 61 90
nC VCC = 400V
VGE = 15V
See Fig. 8
---- 32 ----
---- 20 ---- ns TJ = 25°C
---- 170 260
IC = 27A, VCC = 480V
---- 88 130
VGE = 15V, RG = 5.0
---- 0.12 ----
Energy losses include "tail"
---- 0.54 ---- mJ See Fig. 10, 11, 13, 14
---- 0.66 0.9
---- 31 ----
TJ = 150°C,
---- 23 ---- ns IC = 27A, VCC = 480V
---- 230 ----
VGE = 15V, RG = 5.0
---- 120 ----
Energy losses include "tail"
---- 1.6 ---- mJ See Fig. 13, 14
---- 13 ---- nH Measured 5mm from package
---- 4000 ----
VGE = 0V
---- 250 ----
---- 52 ----
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com

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