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IRG4PC50UD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRG4PC50UD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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IRG4PC50UD pdf
IRG4PC50UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ----
VCE(on)
Collector-to-Emitter Saturation Voltage ----
----
----
VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ----
gfe Forward Transconductance T
16
ICES
Zero Gate Voltage Collector Current
----
----
VFM Diode Forward Voltage Drop
----
----
IGES Gate-to-Emitter Leakage Current ----
----
0.60
1.65
2.0
1.6
----
-13
24
----
----
1.3
1.2
----
---- V
---- V/°C
2.0
---- V
----
6.0
---- mV/°C
---- S
250 µA
6500
1.7 V
1.5
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 27A
VGE = 15V
IC = 55A
See Fig. 2, 5
IC = 27A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 27A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 25A
See Fig. 13
IC = 25A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
---- 180 270
IC = 27A
---- 25 38 nC VCC = 400V
See Fig. 8
---- 61 90
---- 46 ----
VGE = 15V
TJ = 25°C
---- 25 ----
---- 140 230
ns IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0
---- 74 110
Energy losses include "tail" and
---- 0.99 ----
diode reverse recovery.
---- 0.59 ---- mJ See Fig. 9, 10, 11, 18
---- 1.58 1.9
---- 44 ----
---- 27 ----
---- 240 ----
---- 130 ----
TJ = 150°C, See Fig. 9, 10, 11, 18
ns IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
---- 2.3 ---- mJ diode reverse recovery.
---- 13 ---- nH Measured 5mm from package
---- 4000 ----
---- 250 ----
VGE = 0V
pF VCC = 30V
See Fig. 7
---- 52 ----
ƒ = 1.0MHz
---- 50 75 ns TJ = 25°C See Fig.
---- 105 160
TJ = 125°C 14
IF = 25A
---- 4.5 10 A TJ = 25°C See Fig.
---- 8.0 15
TJ = 125°C 15
---- 112 375 nC TJ = 25°C See Fig.
VR = 200V
---- 420 1200
TJ = 125°C
---- 250 ---- A/µs TJ = 25°C
16 di/dt 200A/µs
---- 160 ----
TJ = 125°C
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IRG4PC50UINSULATED GATE BIPOLAR TRANSISTORIRF
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IRG4PC50UDINSULATED GATE BIPOLAR TRANSISTORIRF
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