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IRG4BC30FD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4BC30FD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG4BC30FD?> डेटा पत्रक पीडीएफ

IRG4BC30FD pdf
IRG4BC30FD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage ----
VCE(on)
Collector-to-Emitter Saturation Voltage ----
----
----
VGE(th)
Gate Threshold Voltage
3.0
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage ----
gfe Forward Transconductance „ 6.1
ICES
Zero Gate Voltage Collector Current
----
----
VFM Diode Forward Voltage Drop
----
----
IGES Gate-to-Emitter Leakage Current ----
---- ---- V
0.69 ---- V/°C
1.59 1.8
1.99 ---- V
1.70 ----
---- 6.0
-11 ---- mV/°C
10 ---- S
---- 250 µA
---- 2500
1.4 1.7 V
1.3 1.6
---- ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 17A
VGE = 15V
IC = 31A
See Fig. 2, 5
IC = 17A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 17A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
---- 51 77
---- 7.9 12
---- 19 28
---- 42 ----
---- 26 ----
---- 230 350
---- 160 230
---- 0.63 ----
---- 1.39 ----
---- 2.02 3.9
---- 42 ----
---- 27 ----
---- 310 ----
---- 310 ----
---- 3.2 ----
---- 7.5 ----
---- 1100 ----
---- 74 ----
---- 14 ----
---- 42 60
---- 80 120
---- 3.5 6.0
---- 5.6 10
---- 80 180
---- 220 600
---- 180 ----
---- 120 ----
IC = 17A
nC VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
ns IC = 17A, VCC = 480V
VGE = 15V, RG = 23W
Energy losses include "tail" and
diode reverse recovery.
mJ See Fig. 9, 10, 11, 18
ns
mJ
nH
pF
ns
A
nC
A/µs
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 17A, VCC = 480V
VGE = 15V, RG = 23W
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 12A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C 16 di/dt 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
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