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IRG4BC30U-S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4BC30U-S
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG4BC30U-S pdf
IRG4BC30U-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „ 18 — —
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage — 0.63 —
— 1.95 2.1
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 12A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance …
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
— 2.52 — V IC = 23A
See Fig.2, 5
— 2.09 —
IC = 12A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -13 — mV/°C VCE = VGE, IC = 250µA
3.1 8.6 — S VCE = 100V, IC = 12A
— — 250 µA VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ. Max.
50 75
8.1 12
18 27
17 —
9.6 —
78 120
97 150
0.16 —
0.20 —
0.36 0.50
20 —
13 —
180 —
140 —
0.73 —
7.5 —
1100 —
73 —
14 —
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 12A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC = 12A, VCC = 480V
VGE = 15V, RG = 23W
Energy losses include "tail"
See Fig. 10, 11, 13, 14
TJ = 150°C,
IC = 12A, VCC = 480V
VGE = 15V, RG = 23W
Energy losses include "tail"
See Fig. 13, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig.7
ƒ = 1.0MHz
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23W ,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width £ 80µs; duty factor £ 0.1%.
… Pulse width 5.0µs, single shot.
2 www.irf.com

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