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IRG4BC30W-S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4BC30W-S
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4BC30W-S pdf
IRG4BC30W-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
3.0
11
Typ. Max. Units
Conditions
— — V VGE = 0V, IC = 250µA
— — V VGE = 0V, IC = 1.0A
0.34 — V/°C VGE = 0V, IC = 1.0mA
2.1 2.7
IC = 12A
VGE = 15V
2.45 — V
IC = 23A
See Fig.2, 5
1.95 —
IC = 12A , TJ = 150°C
— 6.0
VCE = VGE, IC = 250µA
-11 — mV/°C VCE = VGE, IC = 250µA
16 — S VCE = 100 V, IC = 12A
— 250 µ A VGE = 0V, VCE = 600V
— 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 51 76
— 7.6 11
— 18 27
— 25 —
IC = 12A
nC VCC = 400V
VGE = 15V
See Fig.8
— 16 — ns TJ = 25°C
— 99 150
IC = 12A, VCC = 480V
— 67 100
VGE = 15V, RG = 23
— 0.13 —
Energy losses include "tail"
— 0.13 — mJ See Fig. 9, 10, 13, 14
— 0.26 0.35
— 24 —
— 17 —
— 150 —
— 150 —
TJ = 150°C,
ns IC = 12A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail"
— 0.55 — mJ See Fig. 11,13, 14
— 7.5 — nH Measured 5mm from package
— 980 —
— 71 —
— 18 —
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
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