DataSheet.in

IRG4PC40KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRG4PC40KD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG4PC40KD?> डेटा पत्रक पीडीएफ

IRG4PC40KD pdf
IRG4PC40KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 250µA
0.46 V/°C VGE = 0V, IC = 1.0mA
2.10 2.6
IC = 25A
VGE = 15V
2.70 V IC = 42A
See Fig. 2, 5
2.14
IC = 25A, TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-13 mV/°C VCE = VGE, IC = 250µA
7.0 14 S VCE = 100V, IC = 25A
— — 250 µA VGE = 0V, VCE = 600V
— — 3500
VGE = 0V, VCE = 600V, TJ = 150°C
1.3 1.7 V IC = 15A
See Fig. 13
1.2 1.6
IC = 15A, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
120 180
IC = 25A
16 24 nC VCC = 400V
51 77
VGE = 15V
53
See Fig.8
33 ns TJ = 25°C
110 160
IC = 25A, VCC = 480V
100 150
VGE = 15V, RG = 10
0.95
Energy losses include "tail"
0.76 mJ See Fig. 9,10,14
1.71 2.3
10 — —
52
37
220
140
µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10, VCPK < 500V
TJ = 150°C,
ns IC = 25A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
2.67 mJ See Fig. 11,14
13 nH Measured 5mm from package
1600
130
55
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
42 60 ns TJ = 25°C See Fig.
74 120
TJ = 125°C 14
IF = 15A
4.0 6.0 A TJ = 25°C See Fig.
6.5 10
TJ = 125°C 15
VR = 200V
80 180 nC TJ = 25°C See Fig.
220 600
TJ = 125°C
16 di/dt = 200Aµs
188 A/µs TJ = 25°C See Fig.
160
TJ = 125°C 17
www.irf.com

विन्यास 10 पेज
डाउनलोड[ IRG4PC40KD Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG4PC40KINSULATED GATE BIPOLAR TRANSISTORIRF
IRF
IRG4PC40KDINSULATED GATE BIPOLAR TRANSISTORIRF
IRF


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English