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IRG4PH50KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRG4PH50KD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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IRG4PH50KD pdf
IRG4PH50KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
1200
3.0
13
0.91
2.77
3.28
2.54
-10
19
2.5
2.1
V
V/°C
3.5
V
6.0
mV/°C
S
250 µA
6500
3.5 V
3.0
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 24A
VGE = 15V
IC = 45A
See Fig. 2, 5
IC = 24A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 24A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 16A
See Fig. 13
IC = 16A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
10
Typ. Max.
180 270
25 38
70 110
87
100
140 300
200 300
3.83
1.90
5.73 7.9
——
67
72
310
390
8.36
13
2800
140
53
90 135
164 245
5.8 10
8.3 15
260 675
680 1838
120
76
Units
nC
ns
mJ
µs
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 24A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC = 24A, VCC = 800V
VGE = 15V, RG = 5.0
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 5.0
TJ = 150°C, See Fig. 10,11,18
IC = 24A, VCC = 800V
VGE = 15V, RG = 5.0Ω,
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 16A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt = 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
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