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IRG4PH50S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRG4PH50S
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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IRG4PH50S pdf
IRG4PH50S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage 1200
Emitter-to-Collector Breakdown Voltage T 18
Temperature Coeff. of Breakdown Voltage
1.22
1.47
1.7
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0 A
VGE = 0V, IC = 2.0 mA
IC = 33A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
1.75 V IC = 57A
See Fig.2, 5
1.55
IC = 33A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-11 mV/°C VCE = VGE, IC = 250µA
27 40 S VCE = 100V, IC = 33A
— — 250 µ A VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 1200V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
167 251
IC = 33A
25 38 nC VCC = 400V
See Fig. 8
55 83
32
VGE = 15V
29 ns TJ = 25°C
845 1268
IC = 33A, VCC = 960V
425 638
VGE = 15V, RG = 5.0
1.80
Energy losses include "tail"
19.6 mJ See Fig. 9, 10, 14
21.4 44
32
30
1170
1000
TJ = 150°C,
ns IC = 33A, VCC = 960V
VGE = 15V, RG = 5.0
Energy losses include "tail"
37 mJ See Fig. 10,11,14
13 nH Measured 5mm from package
3600
160
VGE = 0V
pF VCC = 30V
See Fig. 7
30
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com

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