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IRG4PH50U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRG4PH50U
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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IRG4PH50U pdf
IRG4PH50U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 — —
V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 — —
V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 1.20 V/°C VGE = 0V, IC = 1.0mA
2.56 3.5
IC = 20A
VCE(ON)
Collector-to-Emitter Saturation Voltage
2.78 3.7
3.20
V
IC = 24A
IC = 45A
VGE = 15V
See Fig.2, 5
2.54
IC = 24A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage -13 mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U
23 35 S VCE = 100V, IC = 24A
— — 250
VGE = 0V, VCE = 1200V
ICES
Zero Gate Voltage Collector Current
— — 2.0 µA VGE = 0V, VCE = 24V, TJ = 25°C
— — 5000
VGE = 0V, VCE = 1200V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Eon
Eoff
Ets
LE
Cies
Coes
Cres
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
160 250
IC = 24A
27 40 nC VCC = 400V
See Fig. 8
53 83
VGE = 15V
35
15 ns TJ = 25°C
200 350
IC = 24A, VCC = 960V
290 500
VGE = 15V, RG = 5.0
0.53
Energy losses include "tail"
1.41 mJ See Fig. 9, 10, 14
1.94 2.6
31
TJ = 150°C
18 ns IC = 24A, VCC = 960V
320
VGE = 15V, RG = 5.0
280
Energy losses include "tail"
5.40 mJ See Fig. 11, 14
0.35
TJ = 25°C, VGE = 15V, RG = 5.0
1.43 mJ IC = 20A, VCC = 960V
1.78 2.9
Energy losses include "tail"
4.56
See Fig. 9, 10, 11, 14, TJ = 150°C
13 nH Measured 5mm from package
3600
VGE = 0V
160 pF VCC = 30V
See Fig. 7
31
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com

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