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IRG4PH50UD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRG4PH50UD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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<?=IRG4PH50UD?> डेटा पत्रक पीडीएफ

IRG4PH50UD pdf
IRG4PH50UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
1200
3.0
23
1.20
2.56
2.78
3.20
2.54
-13
35
2.5
2.1
V
V/°C
3.5
3.7
V
6.0
mV/°C
S
250 µA
6500
3.5 V
3.0
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 20A
VGE = 15V
IC = 24A
IC = 45A
See Fig. 2, 5
IC = 24A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 24A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 16A
See Fig. 13
IC = 16A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
160 250
IC = 24A
27 40 nC VCC = 400V
See Fig. 8
53 80
VGE = 15V
47
TJ = 25°C
24 ns IC = 24A, VCC = 800V
110 170
VGE = 15V, RG = 5.0
180 260
Energy losses include "tail" and
2.10
diode reverse recovery.
1.50 mJ See Fig. 9, 10, 18
3.60 4.6
46
27
240
330
TJ = 150°C, See Fig. 11, 18
ns IC = 24A, VCC = 800V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
6.38 mJ diode reverse recovery.
13 nH Measured 5mm from package
3600
160
31
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
90 135 ns TJ = 25°C See Fig.
164 245
TJ = 125°C 14
IF = 16A
5.8 10 A TJ = 25°C See Fig.
8.3 15
TJ = 125°C 15
VR = 200V
260 675 nC TJ = 25°C See Fig.
680 1838
TJ = 125°C
16 di/dt = 200A/µs
120 A/µs TJ = 25°C See Fig.
76
TJ = 125°C 17
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG4PH50UINSULATED GATE BIPOLAR TRANSISTORIRF
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IRG4PH50UDINSULATED GATE BIPOLAR TRANSISTORIRF
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