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IRG4PF50W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRG4PF50W
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG4PF50W?> डेटा पत्रक पीडीएफ

IRG4PF50W pdf
IRG4PF50W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 900 ––– ––– V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage  18 ––– ––– V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ––– 0.295 ––– V/°C VGE = 0V, IC = 3.5mA
––– 2.25 2.7
IC = 28A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
––– 2.74 –––
––– 2.12 –––
V
IC = 60A
See Fig.2, 5
IC = 28A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ––– -13 ––– mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance 
26 39 ––– S VCE 15V, IC = 28A
ICES
Zero Gate Voltage Collector Current
––– ––– 500 µ A VGE = 0V, VCE = 900V
––– ––– 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
––– ––– 5.0 mA VGE = 0V, VCE = 900V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
––– 160 240
IC = 28A
––– 19 29
––– 53 80
nC VCC = 400V
VGE = 15V
See Fig. 8
––– 29 –––
––– 26 ––– ns TJ = 25°C
––– 110 170
IC = 28A, VCC = 720V
––– 150 220
VGE = 15V, RG = 5.0
––– 0.19 –––
Energy losses include "tail"
––– 1.06 ––– mJ See Fig. 10, 11, 13, 14
––– 1.25 1.7
––– 28 –––
TJ = 150°C,
––– 26 ––– ns IC = 28A, VCC = 720V
––– 280 –––
VGE = 15V, RG = 5.0
––– 90 –––
Energy losses include "tail"
––– 3.45 ––– mJ See Fig. 13, 14
––– 13 ––– nH Measured 5mm from package
––– 3300 –––
VGE = 0V
––– 200 ––– pF VCC = 30V
––– 45 –––
ƒ = 1.0MHz
See Fig. 7
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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