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IRG4PH40UD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - International Rectifier

भाग संख्या IRG4PH40UD
समारोह INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG4PH40UD pdf
IRG4PH40UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
1200
3.0
16
0.43
2.43
2.97
2.47
-11
24
2.6
2.4
V
V/°C
3.1
V
6.0
mV/°C
S
250 µA
5000
3.3 V
3.1
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 21A
VGE = 15V
IC = 41A
See Fig. 2, 5
IC = 21A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 21A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 125°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
86 130
IC = 21A
13 20 nC VCC = 400V
See Fig. 8
29 44
46
VGE = 15V
TJ = 25°C
35 ns IC = 21A, VCC = 800V
97 150
VGE = 15V, RG = 10
240 360
Energy losses include "tail" and
1.80
diode reverse recovery.
1.93 mJ See Fig. 9, 10, 18
3.73 4.6
42
32
240
510
TJ = 150°C, See Fig. 11, 18
ns IC = 21A, VCC = 800V
VGE = 15V, RG = 10
Energy losses include "tail" and
7.04 mJ diode reverse recovery.
13 nH Measured 5mm from package
1800
120
VGE = 0V
pF VCC = 30V
See Fig. 7
18
ƒ = 1.0MHz
63 95 ns TJ = 25°C See Fig.
106 160
4.5 8.0
TJ = 125°C 14
A TJ = 25°C See Fig.
IF = 8.0A
6.2 11
TJ = 125°C 15
VR = 200V
140 380 nC TJ = 25°C See Fig.
335 880
TJ = 125°C
16 di/dt = 200A/µs
133 A/µs TJ = 25°C See Fig.
85
TJ = 125°C 17
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