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IRG4PH40KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - International Rectifier

भाग संख्या IRG4PH40KD
समारोह INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4PH40KD pdf
IRG4PH40KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
1200
3.0
8.0
0.37
2.74
3.29
2.53
-3.3
12
2.6
2.4
V
V/°C
3.4
V
6.0
mV/°C
S
250 µA
3000
3.3 V
3.1
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 15A
VGE = 15V
IC = 30A
See Fig. 2, 5
IC = 15A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 15A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 125°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
94 140
IC = 15A
14 22 nC VCC = 400V
See Fig.8
37 55
50
VGE = 15V
31 ns TJ = 25°C
96 140
IC = 15A, VCC = 800V
220 330
VGE = 15V, RG = 10
1.31
Energy losses include "tail"
1.12 mJ and diode reverse recovery
2.43 2.8
See Fig. 9,10,18
10 — —
µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 10, VCPK < 500V
49
33
290
440
TJ = 150°C,
See Fig. 10,11,18
ns IC = 15A, VCC = 800V
VGE = 15V, RG = 10Ω,
Energy losses include "tail"
5.1 mJ and diode reverse recovery
13 nH Measured 5mm from package
1600
77
VGE = 0V
pF VCC = 30V
See Fig. 7
26
ƒ = 1.0MHz
63 95 ns TJ = 25°C See Fig.
106 160
TJ = 125°C 14
4.5 8.0 A TJ = 25°C See Fig.
IF = 8.0A
6.2 11
TJ = 125°C 15
VR = 200V
140 380 nC TJ = 25°C See Fig.
335 880
TJ = 125°C
16 di/dt = 200Aµs
133 A/µs TJ = 25°C See Fig.
85
TJ = 125°C 17
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