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APT4020BVR डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. - Advanced Power Technology

भाग संख्या APT4020BVR
समारोह Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
1 Page
		
<?=APT4020BVR?> डेटा पत्रक पीडीएफ

APT4020BVR pdf
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6
APT4020BVR
MIN TYP MAX UNIT
2650 3180
400 560 pF
180 270
120 180
16 24 nC
60 90
10 20
11 22
ns
38 60
7 14
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
t rr
Q rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
MIN TYP MAX UNIT
23
Amps
92
1.3 Volts
360 ns
6 µC
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.50
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 3.63mH, RG = 25, Peak IL = 23A
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.02
0.01
Note:
t1
0.005
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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