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APT4016BN डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS - Advanced Power Technology

भाग संख्या APT4016BN
समारोह N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
1 Page
		
<?=APT4016BN?> डेटा पत्रक पीडीएफ

APT4016BN pdf
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8
APT4016/4018BN
MIN TYP MAX UNIT
2850
690
280
3500
900
400
pF
130 200
20 30 nC
60 90
15 30
42 84
ns
90 135
65 130
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
IS
Continuous Source Current
(Body Diode)
APT4016BN
APT4018BN
ISM
Pulsed Source Current 1
(Body Diode)
APT4016BN
APT4018BN
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
t rr Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
MIN TYP MAX UNIT
31
29
Amps
124
116
1.3 Volts
350 700 ns
4.5 9 µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
ILM
Characteristic
Test Conditions / Part Number
Safe Operating Area
Safe Operating Area
VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
Inductive Current Clamped
APT4016BN
APT4018BN
MIN
360
360
124
116
TYP
MAX
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
UNIT
Watts
Amps
D=0.5
0.1 0.2
0.05 0.1
0.05
0.01 0.02
Note:
0.005
0.01
t1
t2
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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