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APT30M70BVFR डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. - Advanced Power Technology

भाग संख्या APT30M70BVFR
समारोह Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
1 Page
		
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APT30M70BVFR pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge 3
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on) Turn-on Delay Time
t r Rise Time
td(off) Turn-off Delay Time
t f Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.6
APT30M70BVFR
MIN TYP MAX UNIT
4890 5870
882 1235 pF
277 415
152 225
35 52 nC
66 99
14 28
21 42
ns
57 85
10 20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN TYP MAX UNIT
48
Amps
192
1.3 Volts
5 V/ns
225
ns
400
1.0
µC
4.2
10
Amps
20
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.34
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 1.13mH, RG = 25, Peak IL = 48A
5 IS -ID [Cont.], di/dt = 100A/µs, VDD VDSS, Tj 150°C, RG = 2.0,
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.4
D=0.5
0.1 0.2
0.05 0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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भाग संख्याविवरणविनिर्माण
APT30M70BVFRPower MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Advanced Power Technology
Advanced Power Technology


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