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APT30M61SLL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. - Advanced Power Technology

भाग संख्या APT30M61SLL
समारोह Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
1 Page
		
<?=APT30M61SLL?> डेटा पत्रक पीडीएफ

APT30M61SLL pdf
DYNAMIC CHARACTERISTICS
APT30M61 BLL - SLL
Symbol Characteristic
Test Conditions
MIN TYP
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
3830
910
43
Qg Total Gate Charge 3
VGS = 10V
72
Qgs
LQgd
ICAtd(on)
tr
HNtd(off)
Ctf
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6W
E TE TIONSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
NC ASymbol
VA RMIS
D OISM
A INFVSD
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
19
28
12
20
36
13
MIN TYP
t rr Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
440
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
5.8
dv/dt Peak Diode Recovery dv/dt 5
MAX
MAX
54
216
1.3
5
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
V/ns
THERMAL CHARACTERISTICS
Symbol
RqJC
RqJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.31
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 0.89mH, RG = 25W, Peak IL = 54A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS £ -ID[Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-247 Package Outline
D3PAK Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
13.41 (.528)
13.51 (.532)
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058

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डाउनलोड[ APT30M61SLL Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
APT30M61SLLPower MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.Advanced Power Technology
Advanced Power Technology


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