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APT30M36LLL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. - Advanced Power Technology

भाग संख्या APT30M36LLL
समारोह Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
1 Page
		
<?=APT30M36LLL?> डेटा पत्रक पीडीएफ

APT30M36LLL pdf
DYNAMIC CHARACTERISTICS
APT30M36 B2LL - LLL
Symbol Characteristic
Test Conditions
MIN TYP
Ciss
Coss
Input Capacitance
Output Capacitance
VGS = 0V
VDS = 25V
6540
1564
Crss Reverse Transfer Capacitance
f = 1 MHz
74
Qg Total Gate Charge 3
VGS = 10V
122
Qgs
Qgd
Ltd(on)
ICAtr
Ntd(off)
Htf
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6W
TEC IONSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
E TSymbol
NC MAIS
VA RISM
D FOVSD
A INt rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
33
47
14
19
30
5
MIN TYP
530
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
11.5
dv/dt Peak Diode Recovery dv/dt 5
MAX
MAX
84
336
1.3
5
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
V/ns
THERMAL CHARACTERISTICS
Symbol
RqJC
RqJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.22
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 0.71mH, RG = 25W, Peak IL = 84A
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS £ -ID[Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
2.29 (.090)
2.69 (.106)
Gate
Drain
Source

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डाउनलोड[ APT30M36LLL Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
APT30M36LLLPower MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.Advanced Power Technology
Advanced Power Technology


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