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APT30M30B2LL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. - Advanced Power Technology

भाग संख्या APT30M30B2LL
समारोह Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
1 Page
		
<?=APT30M30B2LL?> डेटा पत्रक पीडीएफ

APT30M30B2LL pdf
DYNAMIC CHARACTERISTICS
APT30M30 B2LL - LLL
Symbol Characteristic
Test Conditions
MIN TYP MAX
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
7830
1870
89
Qg Total Gate Charge 3
VGS = 10V
146
Qgs
LQgd
Atd(on)
ICtr
HNtd(off)
Ctf
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6W
E TE IONSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
C ATSymbol
VAN RMIS
D OISM
A INFVSD
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
40
56
15
22
35
8
MIN TYP MAX
100
400
1.3
t rr Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
450
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
10.0
dv/dt Peak Diode Recovery dv/dt 6
5
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RqJC
RqJA
Junction to Case
Junction to Ambient
0.18
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
4 Starting Tj = +25°C, L = .6mH, RG = 25W, Peak IL = 100A
5 The maximum current is limited by lead temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
6 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS £ -ID[Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
20.80 (.819)
21.46 (.845)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
3.10 (.122)
3.48 (.137)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
2.29 (.090)
2.69 (.106)
Gate
Drain
Source

विन्यास 2 पेज
डाउनलोड[ APT30M30B2LL Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
APT30M30B2LLPower MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.Advanced Power Technology
Advanced Power Technology


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