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APT30M19JVR डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. - Advanced Power Technology

भाग संख्या APT30M19JVR
समारोह Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
1 Page
		
<?=APT30M19JVR?> डेटा पत्रक पीडीएफ

APT30M19JVR pdf
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = 0.5 ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6
APT30M19JVR
MIN TYP MAX UNIT
18000 21600
3250 4550
980 1470
pF
650 975
115 175 nC
290 435
22 44
33 66
ns
70 135
10 20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
t rr
Q rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
MIN TYP MAX UNIT
130
Amps
520
1.3 Volts
620 ns
14 µC
THERMAL / PACKAGE CHARACTERISTICS
Symbol Characteristic
MIN
RθJC
RθJA
VIsolation
Torque
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
2500
TYP
MAX
0.18
40
13
UNIT
°C/W
Volts
lb•in
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 426µH, RG = 25, Peak IL = 130A
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2
0.1 D=0.5
0.05 0.2
0.1
0.01
0.005
0.05
0.02
0.01
Note:
t1
0.001
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.0005
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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भाग संख्याविवरणविनिर्माण
APT30M19JVFRPower MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETsAdvanced Power Technology
Advanced Power Technology
APT30M19JVRPower MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Advanced Power Technology
Advanced Power Technology


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