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UPA861TD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NECs NPN SILICON RF TWIN TRANSISTOR - NEC

भाग संख्या UPA861TD
समारोह NECs NPN SILICON RF TWIN TRANSISTOR
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=UPA861TD?> डेटा पत्रक पीडीएफ

UPA861TD pdf
UPA861TD
ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
Q1 Q2
VCBO Collector to Base Voltage
V
59
VCEO Collector to Emitter Voltage V
33
VEBO Emitter to Base Voltage
V 2 1.5
IC Collector Current
mA 30 35
PT Total Power Dissipation1 mW 90 105
195 Total
TJ Junction Temperature
°C 150 150
TSTG Storage Temperature
°C -65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB
ORDERING INFORMATION
PART NUMBER
UPA861TD-T3
QUANTITY
10K Pcs./Reel
PACKAGING
Tape & Reel
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
Mounted on Glass Epoxy PCB
(1.08 cm2 x 1.0mm (t))
250
2 Elements in total
200
195
150
105 Q2
100
90
Q1
50
0 25 50 75 100 125 150
Ambient Temperature, TA (ºC)
Q1
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.5
f = 1 MHz
0.4
0.3
0.2
0.1
0 12345
Collector to Base Voltage, VCB (V)
Q2
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.5
f = 1 MHz
0.4
0.3
0.2
0.1
0 2 4 6 8 10
Collector to Base Voltage, VCB (V)

विन्यास 10 पेज
डाउनलोड[ UPA861TD Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UPA861TDNECs NPN SILICON RF TWIN TRANSISTORNEC
NEC


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