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UPA843TC डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD - NEC

भाग संख्या UPA843TC
समारोह NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
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<?=UPA843TC?> डेटा पत्रक पीडीएफ

UPA843TC pdf
µPA843TC
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
Q1 Q2
15 9
6 5.5
2 1.5
35 100
200 in 1 element
230 in 2 elements
150
65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy substrate
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
(1) Q1
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO
h Note 1
FE
VEB = 1 V, IC = 0 mA
VCE = 1 V, IC = 5 mA
fT VCE = 1 V, IC = 5 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz
NF VCE = 1 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
C Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
MIN.
60
12
8.5
TYP.
90
13.5
10
1.3
MAX.
200
200
120
2.5
Unit
nA
nA
GHz
dB
dB
0.25 0.5 pF
(2) Q2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO
h Note 1
FE
VEB = 1 V, IC = 0 mA
VCE = 1 V, IC = 5 mA
fT VCE = 1 V, IC = 5 mA, f = 2 GHz
fT VCE = 1 V, IC = 15 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz
NF VCE = 1 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
C Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
MIN.
100
3.5
5.5
3.5
4.5
TYP.
5.0
6.5
4.0
5.5
1.5
MAX.
600
600
160
2.5
Unit
nA
nA
GHz
GHz
dB
dB
dB
0.8 1.0 pF
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2 %
2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
2 Preliminary Data Sheet P14679EJ2V0DS00

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भाग संख्याविवरणविनिर्माण
UPA843TCNPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLDNEC
NEC


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