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UPA836TF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE - NEC

भाग संख्या UPA836TF
समारोह NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=UPA836TF?> डेटा पत्रक पीडीएफ

UPA836TF pdf
µPA836TF
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
RATING
Q1 Q2
99
66
22
30 100
150 in 1 element
150 in 1 element
200 in 2 elementsNote
150 150
65 to +150
UNIT
V
V
V
mA
mW
°C
°C
Note 110 mW must not be exceeded for 1 element.
(1) Q1
ELECTRICAL CHARACTERISTICS
PARAMETER
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Feedback capacitance
Insertion power gain
Noise figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
|S21e|2
NF
CONDITION
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 10 mANote 1
VCE = 3 V, IC = 10 mA, f = 2 GHz
VCB = 3 V, IE = 0, f = 1 MHzNote 2
VCE = 3 V, IC = 10 mA, f = 2 GHz
VCE = 3 V, IC = 3 mA, f = 2 GHz
MIN.
75
7
TYP.
12
0.4
8.5
1.5
MAX.
0.1
0.1
150
0.7
2.5
UNIT
µA
µA
GHz
pF
dB
dB
Notes 1. Pulse measurement: PW 350 µs, Duty cycle 2%
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
2

विन्यास 12 पेज
डाउनलोड[ UPA836TF Datasheet.PDF ]


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