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UPA836TC डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON EPITAXIAL TWIN TRANSISTOR - NEC

भाग संख्या UPA836TC
समारोह NPN SILICON EPITAXIAL TWIN TRANSISTOR
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=UPA836TC?> डेटा पत्रक पीडीएफ

UPA836TC pdf
UPA836TC
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
Q1 Q2
VCBO Collector to Base Voltage
V
99
VCEO Collector to Emitter Voltage V
66
VEBO Emitter to Base Voltage
V 22
IC Collector Current
mA 30 100
PT Total Power Dissipation
TJ Junction Temperature
mW TBD TBD
TBD
°C 150 150
TSTG Storage Temperature
°C -65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
ORDERING INFORMATION
PART NUMBER
UPA836TC-T1
QUANTITY
3000
PACKAGING
Tape & Reel
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
1/99

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