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UPA831TC डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE - NEC

भाग संख्या UPA831TC
समारोह NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
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<?=UPA831TC?> डेटा पत्रक पीडीएफ

UPA831TC pdf
µPA831TC
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
T
Tj
Tstg
Ratings
Q1 Q2
20 20
12 10
3 1.5
100 65
200 in 1 element
200 in 1 element
230 in 2 elements
150 150
65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate.
ELECTRICAL CHARACTERISTICS (TA = +25°C)
(1) Q1
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT
Cre
|S21e|2
NF
Conditions
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 7 mANote 1
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCB = 3 V, IE = 0, f = 1 MHzNote 2
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
MIN.
70
3.0
7.0
TYP.
4.5
0.7
9.0
1.2
MAX.
1.0
1.0
140
1.5
2.5
Unit
µA
µA
GHz
pF
dB
dB
Notes 1. Pulse Measurement: PW 350 µs, Duty Cycle 2%
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
2 Data Sheet P14554EJ1V0DS00

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भाग संख्याविवरणविनिर्माण
UPA831TCNPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGENEC
NEC


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