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UPA827TF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD - NEC

भाग संख्या UPA827TF
समारोह HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
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<?=UPA827TF?> डेटा पत्रक पीडीएफ

UPA827TF pdf
PPA827TF
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feedback Capacitance
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
hFE Ratio
Symbol
ICBO
IEBO
hFE
fT
fT
Cre
|S21e|2
|S21e|2
NF
NF
hFE1/hFE2
Condition
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 2 V, IC = 7 mANote 1
VCE = 2 V, IC = 7 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCB = 2 V, IE = 0, f = 1 MHzNote 2
VCE = 2 V, IC = 7 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 2 V, IC = 3 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 2 V, IC = 7 mA
hFE1 = Smaller hFE value among Q1 and Q2
hFE2 = Larger hFE value among Q1 and Q2
MIN.
70
10
8.5
7.5
7
0.85
TYP.
13
12
0.4
9
8.5
1.5
1.5
MAX.
0.1
0.1
140
0.6
2
2
Unit
PA
PA
GHz
GHz
pF
dB
dB
dB
dB
Notes 1.
2.
Pulse measurement PW d 350 Ps, Duty cycle d 2%
Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge
method). Emitter should be connected to the guard pin of capacitance meter.
hFE CLASSIFICATION
Rank
Marking
hFE value
FB
R84
70 to 140
2

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भाग संख्याविवरणविनिर्माण
UPA827TFHIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLDNEC
NEC


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