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UPA813T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD - NEC

भाग संख्या UPA813T
समारोह NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
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<?=UPA813T?> डेटा पत्रक पीडीएफ

UPA813T pdf
µPA813T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
Collector to Emitter
Saturation Voltage
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
hFE Ratio
SYMBOL
CONDITION
ICBO VCB = 15 V, IE = 0
IEBO VEB = 1 V, IC = 0
VCE (sat) hFE = 10, IC = 5 mA
hFE
fT
Cre
|S21e|2
hFE1/hFE2
VCE = 5 V, IC = 5 mANote 1
VCE = 5 V, IC = 5 mA, f = 1 GHz
VCB = 5 V, IE = 0, f = 1 MHzNote 2
VCE = 5 V, IC = 5 mA, f = 1 GHz
VCE = 5 V, IC = 5 mA
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
MIN.
TYP.
MAX.
0.1
0.1
0.5
UNIT
µA
µA
V
60 200
5.5 GHz
0.7 0.9 pF
5 dB
0.85
Notes 1. Pulse Measurement: Pw 350 µs, Duty cycle 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
73T
60 to 120
GB
74T
100 to 200
TYPICAL CHARACTERISTICS (TA = 25 °C)
PT - TA Characteristics
150 160 mW
120 mW
Free Air
100
50 Per Element
IC - VBE Characteristics
24
VCE = 5 V
16
8
0 50 100 150
Ambient Temperature TA (°C)
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
2

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डाउनलोड[ UPA813T Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UPA813TNPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLDNEC
NEC


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