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UPA812T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD - NEC

भाग संख्या UPA812T
समारोह HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
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<?=UPA812T?> डेटा पत्रक पीडीएफ

UPA812T pdf
µPA812T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
hFE Ratio
SYMBOL
CONDITION
ICBO VCB = 10 V, IE = 0
IEBO VEB = 1 V, IC = 0
hFE VCE = 3 V, IC = 7 mANote 1
fT
Cre
|S21e|2
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCB = 3 V, IE = 0, f = 1 MHzNote 2
VCE = 3 V, IC = 7 mA, f = 1 GHz
NF VCE = 3 V, IC = 7 mA, f = 1 GHz
hFE1/hFE2
VCE = 3 V, IC = 7 mA
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
MIN.
70
4.5
10
0.85
TYP.
7.0
12
1.4
MAX.
0.8
0.8
240
0.9
2.7
UNIT
µA
µA
GHz
pF
dB
dB
Notes 1. Pulse Measurement: Pw 350 µs, Duty cycle 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
34R
70 to 150
GB
35R
110 to 240
TYPICAL CHARACTERISTICS (TA = 25 °C)
PT - TA Characteristics
Free Air
200
100
Per
2 Elements
Element
in
Total
0 50 100
Ambient Temperature TA (°C)
IC - VBE Characteristics
20
VCE = 3 V
150
10
IC - VCE Characteristics
25
20
160µ A
15
140µ A
120µ A
100 µ A
10 80µ A
60µ A
5 40µ A
IB = 20µ A
0 0.5 1.0
Collector to Emitter Voltage VCE (V)
hFE - IC Characteristics
200
VCE = 3 V
100
50
0 0.5 1.0
Base to Emitter Voltage VBE (V)
2
20
10
0.5
1 5 10
Collector Current IC (mA)
50

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डाउनलोड[ UPA812T Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UPA812THIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLDNEC
NEC


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