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UPA809T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD - NEC

भाग संख्या UPA809T
समारोह MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
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<?=UPA809T?> डेटा पत्रक पीडीएफ

UPA809T pdf
µPA809T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
SYMBOL
CONDITION
Collector Cutoff Current
ICBO VCB = 5 V, IE = 0
Emitter Cutoff Current
DC Current Gain
IEBO VEB = 1 V, IC = 0
hFE VCE = 1 V, IC = 3 mANote 1
Gain Bandwidth Product (1) fT VCE = 1 V, IC = 3 mA, f = 2 GHz
Gain Bandwidth Product (2)
Feed-back Capacitance
Insertion Power Gain (1)
Insertion Power Gain (2)
fT
Cre
|S21|2
|S21|2
VCE = 3 V, IC = 20 mA, f = 2 GHz
VCB = 1 V, IE = 0, f = 1 MHzNote 2
VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz
Noise Figure (1)
NF VCE = 1 V, IC = 3 mA, f = 2 GHz
Noise Figure (2)
NF VCE = 3 V, IC = 7 mA, f = 2 GHz
hFE Ratio
hFE1/hFE2
VCE = 1 V, IC = 3 mA
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
MIN.
80
4.0
2.5
0.85
TYP.
4.5
9.0
0.75
3.5
6.5
1.7
1.5
MAX.
0.1
0.1
160
0.85
2.5
UNIT
µA
µA
GHz
GHz
pF
dB
dB
dB
dB
Notes 1. Pulse Measurement: Pw 350 µs, Duty cycle 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
Marking
hFE Value
KB
T88
80 to 160
2

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डाउनलोड[ UPA809T Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
UPA809TMICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLDNEC
NEC


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