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UPA808T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD - NEC

भाग संख्या UPA808T
समारोह MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=UPA808T?> डेटा पत्रक पीडीएफ

UPA808T pdf
µPA808T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feed-back Capacitance
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
hFE Ratio
SYMBOL
CONDITION
ICBO VCB = 5 V, IE = 0
IEBO VEB = 1 V, IC = 0
hFE VCE = 2 V, IC = 20 mANote 1
fT VCE = 2 V, IC = 20 mA, f = 2 GHz
fT
Cre
|S21e|2
|S21e|2
VCE = 1 V, IC = 10 mA, f = 2 GHz
VCB = 2 V, IE = 0, f = 1 MHzNote 2
VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
NF VCE = 2 V, IC = 3 mA, f = 2 GHz
NF VCE = 1 V, IC = 3 mA, f = 2 GHz
hFE1/hFE2
VCE = 2 V, IC = 20 mA
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
MIN.
70
9
7
7
6
0.85
TYP.
11
9
0.4
8.5
7.5
1.3
1.3
MAX.
0.1
0.1
140
0.8
2
2
UNIT
µA
µA
GHz
GHz
pF
dB
dB
dB
dB
Notes 1. Pulse Measurement: Pw 350 µs, Duty cycle 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
Marking
hFE Value
KB
T86
70 to 140
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
2 Elements in Total 180 mW
Per Element
100
90 mW
0 50 100 150
Ambient Temperature TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
200 µA
180 µA
15 160 µA
140 µA
120 µA
10 100 µA
80 µA
60 µA
5 40 µA
IB = 20 µA
0 1.0 2.0 3.0
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 2 V
40
30
20
10
0 0.5 1.0
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
VCE = 2 V
100
50 VCE = 1 V
20
10
12
5 10 20
50 100
Collector Current IC (mA)
2

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डाउनलोड[ UPA808T Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UPA808TMICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLDNEC
NEC


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