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UPA806T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD - NEC

भाग संख्या UPA806T
समारोह MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
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<?=UPA806T?> डेटा पत्रक पीडीएफ

UPA806T pdf
µPA806T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
hFE Ratio
SYMBOL
CONDITION
ICBO VCB = 5 V, IE = 0
IEBO VEB = 1 V, IC = 0
hFE VCE = 3 V, IC = 10 mANote 1
fT
Cre
|S21|2
VCE = 3 V, IC = 10 mA, f = 2 GHz
VCB = 3 V, IE = 0, f = 1 MHzNote 2
VCE = 3 V, IC = 10 mA, f = 2 GHz
NF VCE = 3 V, IC = 3 mA, f = 2 GHz
hFE1/hFE2
VCE = 3 V, IC = 10 mA
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
MIN.
75
7
0.85
TYP.
12
0.4
8.5
1.5
MAX.
0.1
0.1
150
0.7
2.5
UNIT
µA
µA
GHz
pF
dB
dB
Notes 1. Pulse Measurement: Pw 350 µs, Duty cycle 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
Marking
hFE Value
KB
T83
75 to 150
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
200
100
P2eErleEmleemntesnitn Total
0 50 100 150
Ambient Temperature TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 3 V
40
30
20
10
0 0.5 1.0
Base to Emitter Voltage VBE (V)
2

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डाउनलोड[ UPA806T Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UPA806TMICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLDNEC
NEC


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