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IGW25T120 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Low Loss IGBT - Infineon Technologies AG

भाग संख्या IGW25T120
समारोह Low Loss IGBT
मैन्युफैक्चरर्स Infineon Technologies AG 
लोगो Infineon Technologies AG लोगो 
पूर्व दर्शन
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<?=IGW25T120?> डेटा पत्रक पीडीएफ

IGW25T120 pdf
TrenchStop® Series
IGW25T120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
Max. Value
0.65
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=500µA
VGE = 15V, IC=25A
Tj=25°C
Tj=125°C
Tj=150°C
IC=1mA,
VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=150°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=25A
min.
1200
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.0
2.2
5.8
-
-
-
16
8
Unit
max.
-V
2.2
-
-
6.5
mA
0.25
2.5
600
-
nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=25A
VGE=15V
VGE=15V,tSC10µs
VCC = 600V,
Tj = 25°C
-
-
-
-
-
-
1860
96
82
155
13
150
- pF
-
-
- nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.4 Nov. 09

विन्यास 12 पेज
डाउनलोड[ IGW25T120 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
IGW25T120Low Loss IGBTInfineon Technologies AG
Infineon Technologies AG


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