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Q62702-C1659 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) - Siemens Semiconductor Group

भाग संख्या Q62702-C1659
समारोह NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage)
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
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Q62702-C1659 pdf
BCX 41
BSS 64
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BSS 64
BCX 41
V(BR)CE0
80
125
Collector-base breakdown voltage1)
IC = 100 µA
BSS 64
BCX 41
V(BR)CB0
120
125
Emitter-base breakdown voltage
IE = 10 µA
V(BR)EB0 5 – –
Collector cutoff current
VCB = 80 V
VCB = 100 V
VCB = 80 V, TA = 150 ˚C
VCB = 100 V, TA = 150 ˚C
ICB0
BSS 64
– – 100
BCX 41
– – 100
BSS 64
– – 20
BCX 41
– – 20
Collector cutoff current
VCE = 100 V
TA = 85 ˚C
TA = 125 ˚C
ICE0
BCX 41
BCX 41
– – 10
– – 75
Emitter cutoff current
VEB = 4 V
IEB0 – – 100
DC current gain1)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 4 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 20 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
IC = 200 mA, VCE = 1 V
BCX 41
BSS 64
BSS 64
BSS 64
BSS 64
BCX 41
BCX 41
hFE
25 –
– 60 –
20 80 –
– 80 –
– 55 –
63 –
40 –
Collector-emitter saturation voltage1)
VCEsat
IC = 300 mA, IB = 30 mA
BCX 41
– – 0.9
IC = 4 mA, IB = 0.4 mA
BSS 64
– – 0.7
IC = 50 mA, IB = 15 mA
BSS 64
– – 3.0
Base-emitter saturation voltage1)
IC = 300 mA, IB = 30 mA
VBEsat
BCX 41
1.4
AC characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT – 100 –
Output capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t 300 µs, D = 2 %
Cobo
12 –
Unit
V
nA
nA
µA
µA
µA
nA
V
MHz
pF
Semiconductor Group
2

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