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UPF1N50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SURFACE MOUNT N CHANNEL MOSFET - Microsemi Corporation

भाग संख्या UPF1N50
समारोह SURFACE MOUNT N CHANNEL MOSFET
मैन्युफैक्चरर्स Microsemi Corporation 
लोगो Microsemi Corporation लोगो 
पूर्व दर्शन
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<?=UPF1N50?> डेटा पत्रक पीडीएफ

UPF1N50 pdf
WATERTOWN DIVISION
UPF1N50
SURFACE MOUNT N CHANNEL MOSFET
PRELIMINARY
SYMBOL
BVDSS
VGS(TH)2
VGS(TH)1
RDS(ON)1
IDSS1
IDSS2
IGSS1
STATIC ELECTRICAL CHARACTERISTICS
CHARACTERISTICS / TEST CONDITIONS
UPF1N50
Min Typ Max
Drain to Source Breakdown Voltage
(VGS=0V, ID=0.25mA)
500
Gate Threshold Voltage
(VDSVGS, ID=1mA, TJ=37°C ) 2.0 3.4
4.0
Gate Threshold Voltage
(VDSVGS, ID=1mA, TJ=25°C )
3.5
Drain to Source ON-State Resistance
(VGS=10V, ID=1.0A , TJ=25°C )
2.7 3.5
Zero Gate Voltage-Drain Current
(VDS=400V,VGS=0V,TJ= 25°C )
2
Zero Gate Voltage-Drain Current
(VDS=400V,VGS=0V,TJ=125°C )
250
Gate to Source Leakage Current
(VGS= ±20V, VDS=0V, TJ = 25°C )
±100
Units
Volts
Volts
Volts
Ohms
uA
uA
nA
SYMBOL
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td
tf
VSD
trr
Qrr
STATIC ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
TEST CONDITIONS
VGS= 0 V
VDS= 50 V
f = 1MHZ
VGS= 10 V
VDS= 0.5 VDSS
ID= 10 mA
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Resistive Switching (25°C)
VGS= 10 V, VDS= 0.5 BVDSS
ID = 20 mA
Rg = 1.6
VGS= 0 V, IS = 1 A, TJ = 25°C
IS = 1 A, dIs/dt = 100 A/us
IS = 1 A, dIs/dt = 100 A/us
Min Typ Max UNIT
200 250
30 50
15 20
20
1.0
10
pF
pF
pF
nC
nC
nC
20
10
30
30
0.85 1.2
150
0.8
ns
ns
ns
us
V
ns
uC
Copyright 2000
MSC1541.PDF 2000-08-08
Microsemi
Watertown Division
580 Pleasant Street, Watertown, MA. 02472, 617-926-0404, Fax: 617-924-1235
Page 2

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UPF1N50SURFACE MOUNT N CHANNEL MOSFETMicrosemi Corporation
Microsemi Corporation


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