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VHFD16-14IO1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Half Controlled Single Phase Rectifier Bridge - IXYS Corporation

भाग संख्या VHFD16-14IO1
समारोह Half Controlled Single Phase Rectifier Bridge
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=VHFD16-14IO1?> डेटा पत्रक पीडीएफ

VHFD16-14IO1 pdf
VHFD 16
Symbol
IR, ID
VT, VF
VT0
rT
VGT
IGT
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VGD
IGD
IL
IH
tgd
tq
Qr
RthJC
RthJH
Test Conditions
Characteristic Values
VR = VRRM; VD = VDRM
TVJ = TVJM
TVJ = 25°C
IT, IF = 45 A; TVJ = 25°C
For power-loss calculations only (TVJ = 125°C)
£ 5 mA
£ 0.3 mA
£ 2.55 V
1.0 V
40 mW
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 125°C
TVJ = TVJM;
TVJ = TVJM;
VD = 2/3 VDRM
VD = 2/3 VDRM
IG = 0.3 A; tG = 30 ms; TVJ = 25°C
diG/dt = 0.3 A/ms;
TVJ = -40°C
TVJ = 125°C
TVJ = 25°C; VD = 6 V; RGK = ¥
TVJ = 25°C; VD = 0.5VDRM
IG = 0.3 A; diG/dt = 0.3 A/ms
TVJ = 125°C, IT = 15 A, tP = 300 ms, VR = 100 V
di/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 VDRM
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
£ 1.0 V
£ 1.2 V
£ 65 mA
£ 80 mA
£ 50 mA
£ 0.2 V
£ 5 mA
£ 150 mA
£ 200 mA
£ 100 mA
£ 100 mA
£ 2 ms
typ. 150 ms
75 mC
2.4 K/W
0.6 K/W
3.0 K/W
0.75 K/W
10
V
VG
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
3
2
1
1
6
5
4
4: PGAV = 0.5 W
IGD, TVJ = 125°C
0.1
5: PGM = 1 W
6: PGM = 10 W
1 10 100 1000 mA
IG
Fig. 1 Gate trigger range
1000
µs
tgd
100
TVJ = 25°C
typ. Limit
Field Diodes
Symbol
Test Conditions
IFAV
IFAVM
IFRMS
IFSM
I2t
IR
VF
VT0
rT
RthJC
RthJH
TH = 85°C, per Diode
per diode
per diode
TVJ = 45°C;
VR = 0 V
TVJ = TVJM
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = TVJM
VR = 0 V
VR = VRRM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
TVJ = 25°C
IF = 21 A; TVJ = 25°C
For power-loss calculations only (TVJ = 125°C)
per diode; DC current
per diode; DC current
Maximum Ratings
4
4
6
100
110
85
94
50
50
36
37
1
0.15
A
A
A
A
A
A
A
A2s
A2s
A2s
A2s
mA
mA
1.83 V
0.9 V
50 mW
4.4 K/W
5.2 K/W
10
1
10 100 mA 1000
IG
Fig. 2 Gate controlled delay time tgd
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
x for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
2-3

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
VHFD16-14IO1Half Controlled Single Phase Rectifier BridgeIXYS Corporation
IXYS Corporation


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