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VN10K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement-Mode Vertical DMOS FETs - Supertex Inc

भाग संख्या VN10K
समारोह N-Channel Enhancement-Mode Vertical DMOS FETs
मैन्युफैक्चरर्स Supertex Inc 
लोगो Supertex  Inc लोगो 
पूर्व दर्शन
1 Page
		
<?=VN10K?> डेटा पत्रक पीडीएफ

VN10K pdf
Thermal Characteristics
Package
ID (continuous)1,2
ID (pulsed)
TO-92
0.31A
1.0A
Notes:
1. ID (continuous) is limited by max rated Tj.
2. VN0106N3 can be used if an ID (continuous) of 0.5 is needed.
Power Dissipation
@ TC = 25°C
1.0W
θjc
°C/W
125
θja
°C/W
170
VN10K
IDR
0.31A
IDRM
1.0A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max
BVDSS
Drain-to-Source
Breakdown Voltage
60
VGS(th)
VGS(th)
IGSS
IDSS
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
0.8
-3.8
2.5
100
10
500
ID(ON)
RDS(ON)
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
0.75
7.5
5.0
RDS(th)
Change in RDS(th) with Temperature
0.7
GFS Forward Transconductance
100
CISS Input Capacitance
48 60
COSS
Common Source Output Capacitance
16 25
CRSS
Reverse Transfer Capacitance
25
t(ON) Turn-ON Time
10
t(OFF)
Turn-OFF Time
10
VSD Diode Forward Voltage Drop
0.8
trr Reverse Recovery Time
160
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Unit
V
V
mV/°C
nA
µA
µA
A
%/°C
m
pF
ns
V
ns
Conditions
VGS = 0V, ID = 100µA
VGS = VDS , ID = 1mA
VGS = VDS, ID = 1mA
VGS = 15V, VDS = 0V
VGS = 0V, VDS = 45V
VGS = 0V, VDS = 45V, TA 125°C
VGS = 10V, VDS = 10V
VGS = 5V, ID = 0.2A
VGS = 10V, ID = 500mA
VGS = 10V, ID = 500mA,
VDS = 10V, ID = 500mA
VDS = 25V, VGS = 0V
f = 1 MHz
VDD = 15V, ID = 0.6A,
RGEN = 25
VGS = 0V, ISD = 0.5A
VGS = 0V, ISD = 0.5A
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
2

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डाउनलोड[ VN10K Datasheet.PDF ]


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