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IRFI520N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=7.6A) - International Rectifier

भाग संख्या IRFI520N
समारोह Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=7.6A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFI520N?> डेटा पत्रक पीडीएफ

IRFI520N pdf
IRFI520N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
C Drain to Sink Capacitance
Min.
100
–––
–––
2.0
2.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––––––
–––
–––
–––
–––
Typ. Max.
––– –––
0.11 –––
––– 0.20
––– 4.0
––– –––
––– 25
––– 250
––– 100
––– -100
––– 25
––– 4.4
––– 11
4.5 –––
23 –––
32 –––
23 –––
4.5 –––
7.5 ––––––
330 –––
92 –––
54 –––
12 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA†
VGS = 10V, ID = 4.3A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 5.7A†
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 5.7A
VDS = 80V
VGS = 10V, See Fig. 6 and 13 „†
VDD = 50V
ID = 5.7A
RG = 22
RD = 8.6Ω, See Fig. 10 „†
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5†
ƒ = 1.0MHz
G
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) †
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
99
390
Max.
7.6
38
1.3
150
580
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 4.3A, VGS = 0V „
TJ = 25°C, IF = 5.7A
di/dt = 100A/µs „†
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 4.7mH
RG = 25, IAS = 5.7A. (See Figure 12)
ƒ ISD 5.7A, di/dt 240A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… t=60s, ƒ=60Hz
† Uses IRF520N data and test conditions
D
S

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