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IRFI260 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - TRANSISTOR N-CHANNEL(Vdss=200V/ Rds(on)=0.060ohm/ Id=45A*) - International Rectifier

भाग संख्या IRFI260
समारोह TRANSISTOR N-CHANNEL(Vdss=200V/ Rds(on)=0.060ohm/ Id=45A*)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFI260?> डेटा पत्रक पीडीएफ

IRFI260 pdf
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IRFI260 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage 200
BVDSS/TJ Temp. Coefficient of Breakdown Voltage —
RDS(on) Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
2.0
gfs Forward Transconductance
22
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Typ. Max. Units
Test Conditions
—— V
VGS = 0V, ID = 1.0 mA
0.24
— V/°C
0.060
0.068
4.0 V
— S( )
25 µA
250
100
-100
230
40
110
nA
nC
Reference to 25°C, ID = 1.0 mA
VGS = 10V, ID =29A „
VGS = 10V, ID = 45A
VDS = VGS, ID = 250µA
VDS 15V, IDS = 29A „
VDS=0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 45A
VDS = Max. Rating x 0.5
— 29
— 120
— 110
ns
VDD = 100V, ID =45A,
RG = 2.35Ω, VGS =10V
— 92
8.7 —
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Modified MOSFET
symbol showing the
internal inductances.
LS Internal Source Inductance
— 8.7 — nH Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 5100 —
— 1100 —
— 280 —
pF
VGS = 0V, VDS = 25V
f = 1.0 MHz
To Order

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डाउनलोड[ IRFI260 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRFI260TRANSISTOR N-CHANNEL(Vdss=200V/ Rds(on)=0.060ohm/ Id=45A*)International Rectifier
International Rectifier


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