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IRFI1310G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A) - International Rectifier

भाग संख्या IRFI1310G
समारोह Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRFI1310G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.04 VGS = 10V, ID = 13A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
12 ––– ––– S VDS = 50V, ID = 25A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 110
ID = 25A
––– ––– 18 nC VDS = 80V
––– ––– 42
VGS = 10V, See Fig. 6 and 13
––– 13 –––
VDD = 50V
––– 77 ––– ns ID = 25A
––– 82 –––
RG = 9.1
––– 64 –––
RD = 2.0Ω, See Fig. 10
Between lead,
––– 4.5 –––
nH 6mm (0.25in.)
from package
––– 7.5 –––
and center of die contact
––– 2500 –––
VGS = 0V
––– 630 ––– pF VDS = 25V
––– 130 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 22
showing the
A
integral reverse
––– ––– 88
p-n junction diode.
––– ––– 2.5
––– 140 210
––– 0.79 1.2
V TJ = 25°C, IS = 13A, VGS = 0V
ns TJ = 25°C, IF = 25A
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.0mH
RG = 25, IAS = 13A. (See Figure 12)
ISD 25A, di/dt 170A/µs, VDD V(BR)DSS,
TJ 175°C
Pulse width 300µs; duty cycle 2%.
t=60s, ƒ=60Hz
To Order

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