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IRFF9120 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Power MOSFET - Intersil Corporation

भाग संख्या IRFF9120
समारोह P-Channel Power MOSFET
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF9120?> डेटा पत्रक पीडीएफ

IRFF9120 pdf
IRFF9120
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFF9120
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation, (Figure 14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (Figure 14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-100
-100
-4
-16
±20
20
0.16
V
V
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
370
-55 to 150
mJ
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Drain to Source On-State Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
IGSS
rDS(ON)
gfs
tD(ON)
tr
tD(OFF)
tf
QG(TOT)
QGS
QGD
CISS
COSS
CRSS
LD
LS
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = Max Rating, VGS = 0V
VDS = Max Rating x 0.8, VGS = 0V, TJ = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
VGS = -20V
VGS = 20V
VGS = 10V, ID = -2A
VDS > ID(ON) x rDS(ON) Max, ID = 2A
VDD 0.5BVDSS, ID = 4A, RG = 9.1
(Figure 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
VGS = 10V, ID = 4A, VDS = 0.8 Max BVDSS
(See Figure 18 for Test Circuit) Gate Charge
is Essentially Independent of Operating
Temperature
VGS = 0V, VDS = 25V, f = 1.0MHz,
See Figure 10
Measured from the
Drain Lead, 5.0mm
(0.2in) From Header
to Center of Die
Measured from the
Source Lead, 5.0mm
(0.2in) from Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
G
MIN
-100
-2.0
-
-
-4
-
-
-
1.25
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
--V
- -4.0 V
- -250 µA
- -1000 µA
--A
- -100 nA
- 100 nA
0.5 0.6
2- S
25 50
ns
50 100 ns
50 100 ns
50 100 ns
16 22 nC
9-
7-
300 -
200 -
50 -
5.0 -
nC
nC
pF
pF
pF
nH
15 - nH
Junction to Case
Junction to Ambient
4-95
RθJC
RθJA
Typical Socket Mount
S
- - 6.25 oC/W
- - 175 oC/W

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