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IRFF420 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - Intersil Corporation

भाग संख्या IRFF420
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF420?> डेटा पत्रक पीडीएफ

IRFF420 pdf
IRFF420
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFF420
500
500
1.6
6.5
±20
20
0.16
210
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
Drain to Source On Resistance
(Note 2)
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
VGS = 0V, ID = 250µA (Figure 10)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)
VGS = ±20V
VGS = 10V, ID = 1.0A (Figures 8, 9)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
gfs
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
LS
VDS 10V, ID = 2.0A (Figure 12)
VDD = 0.5 x Rated BVDSS, RG = 9.1, VGS = 10V,
ID 1.6A (Figures 17, 18), RL = 152for VDSS = 250V,
RL = 137for VDSS = 225V, MOSFET Switching
Times are Essentially Independent of Operating
Temperature
VGS = 10V, ID = 1.6A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating Temperature.
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
Measured from the Drain
Lead, 5mm (0.2in) from
Header to Center of Die
Measured from the
Source Lead, 5mm (0.2in)
from Header and Source
Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
LD
G
LS
S
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Free Air Operation
MIN
500
2.0
-
-
1.6
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
-- V
- 4.0 V
- 25 µA
- 250 µA
-- A
- ±100 nA
2.5 3.000
2.5 -
30 60
25 50
30 60
15 30
11 15
S
ns
ns
ns
ns
nC
5.0 -
6.0 -
300 -
75 -
20 -
5.0 -
nC
nC
pF
pF
pF
nH
15 -
nH
- 6.25 oC/W
- 175 oC/W
2

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